Characterization of one-dimensional quantum channels in InAs/AlSb
Identifieur interne : 00DE57 ( Main/Repository ); précédent : 00DE56; suivant : 00DE58Characterization of one-dimensional quantum channels in InAs/AlSb
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Abstract
We report on the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a nanofabrication scheme that utilizes a 3-nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4 K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.
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Yang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Naval Research Laboratory, Washington, DC 20375</s1><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Cheng, K A" uniqKey="Cheng K">K. A. Cheng</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Maryland, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Culbertson, J C" uniqKey="Culbertson J">J. C. 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B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aharonov-Bohm effect</term><term>Aluminium compounds</term><term>Etching</term><term>Experimental study</term><term>Hall effect</term><term>High field effects</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Magnetoresistance</term><term>Mesoscopic systems</term><term>Nanotechnology</term><term>Negative resistance</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7363N</term><term>0560G</term><term>7323A</term><term>7340K</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Magnétorésistance</term><term>Etat interface</term><term>Nanotechnologie</term><term>Gravure</term><term>Effet champ intense</term><term>Effet Hall</term><term>Résistance négative</term><term>Effet Aharonov Bohm</term><term>Système mésoscopique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nanotechnologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a nanofabrication scheme that utilizes a 3-nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4 K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>66</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characterization of one-dimensional quantum channels in InAs/AlSb</s1></fA08><fA11 i1="01" i2="1"><s1>YANG (C. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (M. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHENG (K. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>CULBERTSON (J. 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